AGMsemi announced that its 3rd generation SiC trench MOSFET series has officially entered mass production. Featuring advanced trench gate technology, the series achieves 30% lower Rds(on) and 25% higher current density per unit area compared to the previous generation. Ideal for EV traction inverters, OBCs, and solar MPPT applications, it offers customers a more competitive power conversion solution.
Product LaunchThe 2026 Shenzhen International Power Electronics Expo was held April 12-14 at the Shenzhen Convention & Exhibition Center. AGMsemi showcased its full range of IGBT, SiC MOSFET, and power module products. During the exhibition, the company highlighted its latest solutions for new energy vehicles and energy storage, attracting numerous industry customers and professional visitors.
EventsAGMsemi has officially passed the IATF 16949:2016 automotive quality management system certification. This milestone marks the company's quality management in automotive power semiconductors reaching international standards, enabling it to provide high-reliability automotive-grade power devices to the global automotive supply chain. The company will continue to improve its quality management system with a zero-defect target.
HonorsAGMsemi announced its 2025 operating results with full-year revenue growing 45% year-over-year. SiC-related product revenue exceeded 35% of total for the first time. The company added 12 new authorized patents during the year, bringing cumulative patents to over 50. In 2026, the company will continue increasing R&D investment in 3rd generation semiconductors including SiC and GaN, further expanding overseas market presence.
Company NewsAGMsemi recently signed a strategic cooperation agreement with a leading Chinese new energy vehicle manufacturer to supply custom IGBT power modules for their next-generation EV platform. The modules utilize the latest 7th-gen Trench-FS technology with low loss and high power density advantages, with mass production expected to begin in Q2 2026.
PartnershipAGMsemi released its enhanced isolated gate driver IC series, including three drive current levels: Β±4A, Β±6A, and Β±10A. The new products integrate Miller clamp, DESAT protection, soft shutdown, active clamping, and other comprehensive protection features. With 5kVrms isolation voltage and VDE 0884-11 compliance, they are perfectly suited for IGBT and SiC MOSFET drive applications.
Product LaunchAGMsemi's high-frequency IGBT single-tube series developed for solar string inverter MPPT boost circuits passed comprehensive testing by leading inverter manufacturers. Efficiency and reliability indicators reached industry-leading levels. The series utilizes high-speed switching technology with switching frequencies up to 40kHz+, helping solar systems improve power generation efficiency.
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